鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.33 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
鈭?0%
80
10
0.213
+30%
鈭?.9
鈭?/div>
0.2
80
鈭?/div>
0.5
鈭?.2
Min
鈭?0
鈭?0
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.1
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
V
MHz
k鈩?/div>
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00009CED
0.4
鹵0.2
5藲
1
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